Slurries for Silicon Carbide (SiC) Polishing

Saint-Gobain Surface Conditioning ClasSiC™ polishing slurries are high-precision slurries specifically formulated for the chemical mechanical planarization of silicon carbide wafers used in the fabrication of LED and power electronic devices. ClasSiC™ CMP slurries greatly enhance removal rate and planarization performance, delivering an excellent surface finish and scratch-free surface on SiC wafers.

ClasSiC™ slurries are formulated with high-efficiency permanganate oxidizers. ClasSiC™ 2100 utilizes tightly sized engineered nano-particles and accelerant chemistries that facilitate very low rougness surface finish, defectivity and sub-surface damage on all SiC surfaces with a material removal rate of over 10 µm per hour. ClasSiC™ 2000 is an abrasive free solution, relying on precision chemical planarization suitable for final polishing of silicon carbide wafers. These unique slurries provide exceptionally low TTV, LTV, and warp values and deltas. ClasSiC™ slurries offer colloidal and oxidative stability, making them easy to manage and clean. 

Benefits - ClasSiC™

• Exceptionally high removal rate on both Si-face and carbon-face
• Excellent surface finish
• Very low TTV
• Very low LTV
• Very low warp
• Very low scratch potential and defectivity
• Provides epi-ready surface of Si terminated side
• Excellent dispersion, cleanability and oxidative stability
• Saint-Gobain will work with you to formulate a custom ClasSiC slurry for your unique CMP requirements.